FDMA7628 single n-channel 1. 5 v specified powertrench ? mosfet ?2012 fairchild semiconductor corporation FDMA7628 rev.c www.fairchildsemi.com 1 may 2012 d d s g d d pin 1 drain source microfet 2x2 (bottom view) bottom drain contact d d d d s g FDMA7628 single n-channel 1.5 v specified powertrench ? mosfet 20 v, 9.4 a, 14.5 m features ? max r ds(on) = 14.5 m at v gs = 4.5 v, i d = 9.4 a ? max r ds(on) = 18.2 m at v gs = 2.5 v, i d = 8.3 a ? max r ds(on) = 23.3 m at v gs = 1.8 v, i d = 7.3 a ? max r ds(on) = 32.3 m at v gs = 1.5 v, i d = 6.2 a ? low profile-0.8 mm maximum in the new package microfet 2x2 mm ? rohs compliant general description this single n-channel mosfet has been designed using fairchild semiconductor?s advanced power trench ? process to optimize the r ds(on) @ v gs = 1.5 v on special microfet leadframe. applications ? li-lon battery pack ? dc-dc buck converters mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 20 v v gs gate to source voltage 8 v i d -continuous t a = 25 c (note 1a) 9.4 a -pulsed 54 p d power dissipation t a = 25 c (note 1a) 1.9 w power dissipation t a = 25 c (note 1b) 0.7 t j , t stg operating and storage junction temperature range -55 to +150 c r ja thermal resistance, junction to ambient (note 1a) 65 c/w r ja thermal resistance, junction to ambient (note 1b) 180 device marking device package reel size tape width quantity 104 FDMA7628 microfet 2x2 7 ?? 12 mm 3000 units
FDMA7628 single n-channel 1. 5 v specified powertrench ? mosfet ?2012 fairchild semiconductor corporation FDMA7628 rev.c www.fairchildsemi.com 2 electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v 20 v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 15 mv/c i dss zero gate voltage drain current v ds = 16 v, v gs = 0 v 1 a i gss gate to source leakage current v gs = 8 v, v ds = 0 v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 0.4 0.6 1.0 v v gs(th) t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -3 mv/c r ds(on) static drain to source on resistance v gs = 4.5 v, i d = 9.4 a 11.3 14.5 m v gs = 2.5 v, i d = 8.3 a 12.7 18.2 v gs = 1.8 v, i d = 7.3 a 15.0 23.3 v gs = 1.5 v, i d = 6.2 a 18.3 32.3 v gs = 4.5 v, i d = 9.4 a, t j = 125 c 14.7 18.3 g fs forward transconductance v dd = 5 v, i d = 9.4 a 56 s c iss input capacitance v ds = 10 v, v gs = 0 v, f = 1 mhz 1260 1680 pf c oss output capacitance 180 240 pf c rss reverse transfer capacitance 122 185 pf r g gate resistance 1.9 t d(on) turn-on delay time v dd = 10 v, i d = 9.4 a, v gs = 4.5 v, r gen = 6 917ns t r rise time 611ns t d(off) turn-off delay time 37 58 ns t f fall time 611ns q g total gate charge v gs = 0 v to 4.5 v v dd = 10 v, i d = 9.4 a 17.5 nc total gate charge v gs = 0 v to 2.5 v 10.0 nc total gate charge v gs = 0 v to 1.8 v 7.4 nc total gate charge v gs = 0 v to 1.5 v 6.2 nc q gs gate to source charge 1.7 nc q gd gate to drain ?miller? charge 2.7 nc i s maximum continuous drain-source diode forward current 2.0 a v sd source to drain diode forward voltage v gs = 0 v, i s = 2.0 a (note 2) 0.63 1.2 v t rr reverse recovery time i f = 9.4 a, di/dt = 100 a/ s 16 29 ns q rr reverse recovery charge 5 10 nc
FDMA7628 single n-channel 1. 5 v specified powertrench ? mosfet ?2012 fairchild semiconductor corporation FDMA7628 rev.c www.fairchildsemi.com 3 notes: 1. r ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ja is determined by the user's board design. 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. a.65 c/w when mounted on a 1 in 2 pad of 2 oz copper. b. 180 c/w when mounted on a minimum pad of 2 oz copper. g df ds sf ss g df ds sf ss
FDMA7628 single n-channel 1. 5 v specified powertrench ? mosfet ?2012 fairchild semiconductor corporation FDMA7628 rev.c www.fairchildsemi.com 4 typical characteristics t j = 25 c unless otherwise noted figure 1. 0 0.5 1.0 1.5 2.0 2.5 3.0 0 9 18 27 36 45 54 v gs = 1.5 v v gs = 2.5 v v ds , drain to source voltage (v) i d , drain current (a) v gs = 1.2 v v gs = 1.8 v v gs = 4.5 v pulse duration = 80 p s duty cycle = 0.5% max on region characteristics f i g u r e 2 . 0 9 18 27 36 45 54 0 1 2 3 4 v gs = 2.5 v v gs = 4.5 v v gs = 1.8 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 1.5 v v gs = 1.2 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 i d = 9.4 a v gs = 4.5 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 0.91.82.73.64.5 0 10 20 30 40 50 60 t j = 125 o c i d = 9.4 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 0.51.01.52.02.5 0 9 18 27 36 45 54 t j = 125 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 100 t j = -55 o c t j = 25 o c t j = 125 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDMA7628 single n-channel 1. 5 v specified powertrench ? mosfet ?2012 fairchild semiconductor corporation FDMA7628 rev.c www.fairchildsemi.com 5 figure 7. 0 3 6 9 12 15 18 0.0 0.9 1.8 2.7 3.6 4.5 i d = 9.4 a v dd = 12 v v dd = 8 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 10 v gate charge characteristics figure 8. 0.1 1 10 20 10 100 1000 5000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. forward bias safe ( pk ) , peak transient power (w) t, pulse width (sec) figure 11. junction-to-ambient transient thermal response curve 10 -4 10 -3 10 -2 10 -1 11 0 100 1000 0.001 0.01 0.1 1 single pulse r t ja = 180 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25 c unless otherwise noted
FDMA7628 single n-channel 1. 5 v specified powertrench ? mosfet ?2012 fairchild semiconductor corporation FDMA7628 rev.c www.fairchildsemi.com 6 dimensional outlin e and pad layout b. dimensions are in millimeters. c. dimensions and tolerances per a. does not fully conform to jedec registration asme y14.5m, 1994 0.10 c a b 0.05 c top view bottom view recommended land pattern opt 1 0.15 c 0.08 c b a c 2.00 2.00 0.05 0.00 0.15 c 2x 2x 0.8 max side view seating plane 0.10 c (0.20) 0.33 0.20 13 4 6 4 6 3 1 pin #1 ident 0.65 1.30 1.35 (0.48) 1.05 0.40 typ 0.65 typ 1.00 0.80 2.30 1.00 mo-229 dated aug/2003 (0.30) 0.66 recommended land pattern opt 2 4 6 3 1 1. 35 (0.48) 1.05 0.40 typ 0.65 typ 2.30 1.00 no traces or vias allowed in this area pin #1 location d. drawing filename: mkt-mlp06prev1. (0.50) (0.15) (0.50) (0.20) (0.45) (0.20) 1. 05 0.95 0.66 0.56 6x 0.35 0.25 6x
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